SPB03N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Termination :

SMD/SMT

Lead Free :

Lead Free

Number of Pins :

3

Input Capacitance :

400 pF

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package :

Bulk

FET Type :

N-Channel

Turn-On Delay Time :

7 ns

Min Operating Temperature :

-55 °C

Current Rating :

3.2 A

Operating Temperature :

-55°C ~ 150°C (TJ)

Voltage Rating (DC) :

650 V

RoHS :

Compliant

Power Dissipation (Max) :

38W (Tc)

Threshold Voltage :

3 V

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20 V

Continuous Drain Current (ID) :

3.2 A

Halogen Free :

Halogen Free

Turn-Off Delay Time :

64 ns

Packaging :

Cut Tape

Technology :

MOSFET (Metal Oxide)

Rds On Max :

1.4 Ω

Max Power Dissipation :

38 W

Product Status :

Active

Power Dissipation :

38 W

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 10 V

Vgs(th) (Max) @ Id :

3.9V @ 135µA

Supplier Device Package :

PG-TO263-3-2

Nominal Vgs :

3 V

Max Operating Temperature :

150 °C

Continuous Drain Current Id :

3.2

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Rise Time :

3 ns

Drain to Source Voltage (Vdss) :

650 V

Dual Supply Voltage :

650 V

Input Capacitance (Ciss) (Max) @ Vds :

400 pF @ 25 V

Channel Type :

N

Mounting Type :

Surface Mount

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 2A, 10V

FET Feature :

-

Drain to Source Resistance :

1.4 Ω

Series :

CoolMOS™

Drain to Source Breakdown Voltage :

600 V

Current - Continuous Drain (Id) @ 25°C :

3.2A (Tc)