SMMUN2214LT1G
- Mfr.Part #
- SMMUN2214LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 50V SOT23
- Stock
- 25,304
- In Stock :
- 25,304
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Voltage (VCEO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Polarity :
- NPN
- Transistor Type :
- NPN - Pre-Biased
- hFE Min :
- 80
- Width :
- 1.4mm
- Collector Emitter Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA 10V
- Max Power Dissipation :
- 246mW
- Resistor - Base (R1) :
- 10 k Ω
- Element Configuration :
- Single
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Current - Collector Cutoff (Max) :
- 500nA
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 250mV
- Max Collector Current :
- 100mA
- Halogen Free :
- Halogen Free
- Factory Lead Time :
- 4 Weeks
- Length :
- 3.04mm
- Lead Free :
- Lead Free
- Reference Standard :
- AEC-Q101
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 4.7
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2013
- Number of Terminations :
- 3
- Resistor - Emitter Base (R2) :
- 47 k Ω
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Base Part Number :
- MMUN22**L
- Mounting Type :
- Surface Mount
- Height :
- 1.01mm
- Datasheets
- SMMUN2214LT1G

SMMUN2214LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
SMMUN2214LT1G Description
The SMMUN2214LT1G is an NPN Bipolar Digital Transistor (BRT) designed to replace a single device and its external resistor bias network.
SMMUN2214LT1G Features
-
Simplifies Circuit Design
-
Reduces Board Space
-
Reduces Component Count
-
S and NSV Prefix for Automotive and Other Applications
SMMUN2214LT1G Applications
-
Inverter
-
Interface circuit
-
Driver circuit
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