SMMUN2111LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Published :

2012

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

PNP - Pre-Biased

Length :

3.04mm

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Elements :

1

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Surface Mount :

yes

Height :

1.01mm

Collector Emitter Voltage (VCEO) :

50V

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Radiation Hardening :

No

Polarity :

PNP

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

246mW

Current - Collector Cutoff (Max) :

500nA

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Factory Lead Time :

4 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Base Part Number :

MMUN21**L

Resistor - Emitter Base (R2) :

10 k Ω

hFE Min :

35

Lead Free :

Lead Free

Resistor - Base (R1) :

10 k Ω

Collector Emitter Saturation Voltage :

250mV

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Reference Standard :

AEC-Q101

Width :

1.4mm

Packaging :

Tape and Reel (TR)

Pin Count :

3

Min Operating Temperature :

-55°C

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Terminal Position :

Dual

Number of Pins :

3

Number of Terminations :

3