SI5406DC-T1-GE3

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Mfr.Part #
SI5406DC-T1-GE3
Manufacturer
Vishay
Package / Case
8-SMD, Flat Lead
Datasheet
Download
Description
MOSFET N-CH 12V 6.9A 1206-8
Stock
8,097
In Stock :
8,097

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
1.65mm
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Threshold Voltage :
600mV
Turn On Delay Time :
17 ns
RoHS Status :
ROHS3 Compliant
Resistance :
20mOhm
Gate to Source Voltage (Vgs) :
8V
Number of Pins :
8
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Package / Case :
8-SMD, Flat Lead
REACH SVHC :
Unknown
Weight :
84.99187mg
Rds On (Max) @ Id, Vgs :
20mOhm @ 6.9A, 4.5V
Published :
2012
Mounting Type :
Surface Mount
Number of Channels :
1
Packaging :
Tape and Reel (TR)
Mount :
Surface Mount
Vgs (Max) :
±8V
Drain to Source Voltage (Vdss) :
12V
Drain to Source Resistance :
20mOhm
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
9.5A
Rds On Max :
20 mΩ
Supplier Device Package :
1206-8 ChipFET™
Max Operating Temperature :
150°C
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 4.5V
Rise Time :
46ns
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
600mV @ 1.2mA (Min)
Min Operating Temperature :
-55°C
Current - Continuous Drain (Id) @ 25°C :
6.9A Ta
Length :
3.05mm
Fall Time (Typ) :
26 ns
Series :
TrenchFET®
Power Dissipation-Max :
1.3W Ta
Turn-Off Delay Time :
54 ns
Height :
1.1mm
Datasheets
SI5406DC-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI5406DC-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Package / Case:8-SMD, Flat Lead, Mounting Type:Surface Mount, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, SI5406DC-T1-GE3 pinout, SI5406DC-T1-GE3 datasheet PDF, SI5406DC-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI5406DC-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI5406DC-T1-GE3


N-Channel Tape & Reel (TR) 20mOhm @ 6.9A, 4.5V ±8V 20nC @ 4.5V 12V 8-SMD, Flat Lead

SI5406DC-T1-GE3 Overview


Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 9.5A amps.It is [54 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 20mOhm.A turn-on delay time of 17 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 600mV.To operate this transistor, you will need a 12V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).

SI5406DC-T1-GE3 Features


a continuous drain current (ID) of 9.5A
the turn-off delay time is 54 ns
single MOSFETs transistor is 20mOhm
a threshold voltage of 600mV
a 12V drain to source voltage (Vdss)


SI5406DC-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI5406DC-T1-GE3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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