SI5403DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Height :

1.1mm

Number of Elements :

1

Resistance :

30mOhm

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.5W Ta 6.3W Tc

Turn-Off Delay Time :

30 ns

Threshold Voltage :

-3V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.2A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Number of Pins :

8

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Series :

TrenchFET®

Package / Case :

8-SMD, Flat Lead

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Factory Lead Time :

14 Weeks

Drain to Source Voltage (Vdss) :

30V

Number of Channels :

1

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Power Dissipation :

2.5W

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Width :

1.65mm

Input Capacitance (Ciss) (Max) @ Vds :

1340pF @ 15V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

50 ns

Terminal Form :

C BEND

Transistor Application :

SWITCHING

Weight :

84.99187mg

Drain Current-Max (Abs) (ID) :

6A

Length :

3.05mm

Fall Time (Typ) :

18 ns

Rise Time :

140ns

Pin Count :

8

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Continuous Drain Current (ID) :

6A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2015

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

40