SI5406DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

46ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Power Dissipation-Max :

1.3W Ta

Turn-Off Delay Time :

54 ns

Package / Case :

8-SMD, Flat Lead

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

12V

Drain to Source Resistance :

20mOhm

Series :

TrenchFET®

Published :

2007

Weight :

84.99187mg

Current - Continuous Drain (Id) @ 25°C :

6.9A Ta

Rds On Max :

20 mΩ

Max Operating Temperature :

150°C

Number of Pins :

8

Gate to Source Voltage (Vgs) :

8V

Drain to Source Breakdown Voltage :

12V

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.3W

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Elements :

1

Mount :

Surface Mount

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

600mV @ 1.2mA (Min)

Fall Time (Typ) :

46 ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

20mOhm @ 6.9A, 4.5V

Turn On Delay Time :

17 ns

Continuous Drain Current (ID) :

6.9A

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.65mm

Supplier Device Package :

1206-8 ChipFET™

Length :

3.05mm

Height :

1.1mm

Vgs (Max) :

±8V