SFT1202-TL-E
- Mfr.Part #
- SFT1202-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 150V 2A TPFA
- Stock
- 4,391
- In Stock :
- 4,391
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Breakdown Voltage :
- 150V
- Max Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 180V
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 150V
- Pin Count :
- 3
- JESD-609 Code :
- e6
- Transistor Type :
- NPN
- Number of Terminations :
- 2
- Max Collector Current :
- 2A
- Surface Mount :
- yes
- Terminal Position :
- Single
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transition Frequency :
- 140MHz
- Frequency - Transition :
- 140MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2012
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 165mV @ 100mA, 1A
- Power - Max :
- 1W
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- hFE Min :
- 200
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Datasheets
- SFT1202-TL-E

NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
SFT1202-TL-E Overview
In this device, the DC current gain is 200 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 165mV @ 100mA, 1A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
SFT1202-TL-E Features
the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 165mV @ 100mA, 1A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz
SFT1202-TL-E Applications
There are a lot of ON Semiconductor
SFT1202-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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