SFT1202-E

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Mfr.Part #
SFT1202-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 150V 2A TP
Stock
839
In Stock :
839

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Published :
2012
hFE Min :
200
Max Collector Current :
2A
Vce Saturation (Max) @ Ib, Ic :
165mV @ 100mA, 1A
Packaging :
Bulk
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Configuration :
Single
Current - Collector Cutoff (Max) :
1μA ICBO
Transition Frequency :
140MHz
Number of Pins :
3
Radiation Hardening :
No
Transistor Element Material :
SILICON
Emitter Base Voltage (VEBO) :
7V
Transistor Application :
SWITCHING
Frequency - Transition :
140MHz
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Collector Emitter Voltage (VCEO) :
150V
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 5V
Max Power Dissipation :
1W
Factory Lead Time :
2 Weeks
Mounting Type :
Through Hole
Terminal Position :
Single
Collector Emitter Breakdown Voltage :
150V
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
180V
Number of Terminations :
3
Operating Temperature :
150°C TJ
Polarity/Channel Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Case Connection :
COLLECTOR
Lead Free :
Lead Free
Pbfree Code :
yes
Pin Count :
3
ECCN Code :
EAR99
JESD-609 Code :
e6
Power - Max :
1W
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Datasheets
SFT1202-E
Introducing Transistors - Bipolar (BJT) - Single onsemi SFT1202-E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:150°C TJ, SFT1202-E pinout, SFT1202-E datasheet PDF, SFT1202-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SFT1202-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SFT1202-E


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

SFT1202-E Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 165mV @ 100mA, 1A.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 140MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

SFT1202-E Features


the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 165mV @ 100mA, 1A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz


SFT1202-E Applications


There are a lot of ON Semiconductor
SFT1202-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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