SFT1202-E
- Mfr.Part #
- SFT1202-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 150V 2A TP
- Stock
- 839
- In Stock :
- 839
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- hFE Min :
- 200
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 5V
- Emitter Base Voltage (VEBO) :
- 7V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Frequency - Transition :
- 140MHz
- JESD-609 Code :
- e6
- Transition Frequency :
- 140MHz
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 150V
- Collector Base Voltage (VCBO) :
- 180V
- Collector Emitter Voltage (VCEO) :
- 150V
- Power - Max :
- 1W
- Factory Lead Time :
- 2 Weeks
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Number of Elements :
- 1
- Published :
- 2012
- Surface Mount :
- No
- Max Collector Current :
- 2A
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 165mV @ 100mA, 1A
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Datasheets
- SFT1202-E

NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
SFT1202-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 165mV @ 100mA, 1A.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 140MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
SFT1202-E Features
the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 165mV @ 100mA, 1A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz
SFT1202-E Applications
There are a lot of ON Semiconductor
SFT1202-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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