S8050-C-AP

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Mfr.Part #
S8050-C-AP
Manufacturer
Micro Commercial Components (MCC)
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet
Download
Description
TRANS NPN 25V 0.5A TO92
Stock
46,379
In Stock :
46,379

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Manufacturer :
Micro Commercial Components (MCC)
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Transition Frequency :
150MHz
JESD-30 Code :
O-PBCY-T3
Mounting Type :
Through Hole
Voltage - Collector Emitter Breakdown (Max) :
25V
ECCN Code :
EAR99
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max :
625mW
Vce Saturation (Max) @ Ib, Ic :
600mV @ 50mA, 500mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Frequency - Transition :
150MHz
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 50mA 1V
Current - Collector (Ic) (Max) :
500mA
Terminal Finish :
Matte Tin (Sn)
Terminal Position :
BOTTOM
Polarity/Channel Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Qualification Status :
Not Qualified
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
Transistor Element Material :
SILICON
Pbfree Code :
yes
Current - Collector Cutoff (Max) :
100nA
Datasheets
S8050-C-AP
Introducing Transistors - Bipolar (BJT) - Single Micro Commercial Components (MCC) S8050-C-AP from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, S8050-C-AP pinout, S8050-C-AP datasheet PDF, S8050-C-AP amp .Beyond Transistors - Bipolar (BJT) - Single Micro Commercial Components (MCC) S8050-C-AP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Micro Commercial Components (MCC) S8050-C-AP


NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Formed Leads Through Hole

S8050-C-AP Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 50mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 50mA, 500mA.A transition frequency of 150MHz is present in the part.A 25V maximal voltage - Collector Emitter Breakdown is present in the device.

S8050-C-AP Features


the DC current gain for this device is 120 @ 50mA 1V
the vce saturation(Max) is 600mV @ 50mA, 500mA
a transition frequency of 150MHz


S8050-C-AP Applications


There are a lot of Micro Commercial Co
S8050-C-AP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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