S8050-B-AP
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- Mfr.Part #
- S8050-B-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.5A TO92
- Stock
- 43,884
- In Stock ：
- 43,884
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transition Frequency :
- 150MHz
- Terminal Finish :
- Matte Tin (Sn)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 50mA, 500mA
- Packaging :
- Tape and Box (TB)
- JESD-609 Code :
- e3
- Current - Collector (Ic) (Max) :
- 500mA
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 100nA
- Frequency - Transition :
- 150MHz
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Reach Compliance Code :
- Compliant
- JESD-30 Code :
- O-PBCY-T3
- Pin Count :
- 3
- Number of Terminations :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Polarity/Channel Type :
- NPN
- Surface Mount :
- No
- Power - Max :
- 625mW
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 50mA 1V
- Configuration :
- Single
- Datasheets
- S8050-B-AP
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
S8050-B-AP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 50mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 50mA, 500mA.A transition frequency of 150MHz is present in the part.A 25V maximal voltage - Collector Emitter Breakdown is present in the device.
S8050-B-AP Features
the DC current gain for this device is 85 @ 50mA 1V
the vce saturation(Max) is 600mV @ 50mA, 500mA
a transition frequency of 150MHz
S8050-B-AP Applications
There are a lot of Micro Commercial Co
S8050-B-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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