RUL035N02TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 10V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

43m Ω @ 3.5A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Power Dissipation-Max :

320mW Ta

Pbfree Code :

yes

Turn On Delay Time :

10 ns

Power Dissipation :

1W

Factory Lead Time :

20 Weeks

Number of Terminations :

6

Terminal Finish :

Tin/Copper (Sn/Cu)

Number of Pins :

6

JESD-609 Code :

e2

Rise Time :

20ns

Lead Free :

Lead Free

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

10

Fall Time (Typ) :

50 ns

Continuous Drain Current (ID) :

3.5A

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Length :

2.1mm

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

5.7nC @ 4.5V

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

1V @ 1mA

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

20V

FET Type :

N-Channel

Turn-Off Delay Time :

40 ns

Radiation Hardening :

No

Published :

2013

Number of Elements :

1

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±10V

Height :

820μm

Width :

1.8mm

Gate to Source Voltage (Vgs) :

10V

Package / Case :

6-SMD, Flat Leads

Drain-source On Resistance-Max :

0.053Ohm