RU1C002UNTCL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Drain Current-Max (Abs) (ID) :

0.2A

Vgs (Max) :

±8V

Mount :

Surface Mount

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 200mA, 2.5V

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Number of Pins :

85

Terminal Form :

Flat

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

200mA

Number of Channels :

1

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

20V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Drain to Source Voltage (Vdss) :

20V

Rise Time :

10ns

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Turn-Off Delay Time :

15 ns

JESD-30 Code :

R-PDSO-F3

Vgs(th) (Max) @ Id :

1V @ 1mA

Transistor Application :

SWITCHING

Number of Terminations :

3

Terminal Position :

Dual

Package / Case :

SC-85

Fall Time (Typ) :

10 ns

Gate to Source Voltage (Vgs) :

8V

Power Dissipation-Max :

150mW Ta

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Lead Free :

Lead Free

Turn On Delay Time :

5 ns

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 2.5V

FET Type :

N-Channel