RTQ040P02TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

-20V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 10V

Pbfree Code :

yes

Power Dissipation :

1.25W

Terminal Position :

Dual

JESD-609 Code :

e1

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

12.2nC @ 4.5V

Mounting Type :

Surface Mount

Published :

2004

Rds On (Max) @ Id, Vgs :

50m Ω @ 4A, 4.5V

Drain to Source Voltage (Vdss) :

20V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

10

Lead Free :

Lead Free

Rise Time :

35ns

Current Rating :

-4A

Threshold Voltage :

-2V

Power Dissipation-Max :

1.25W Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs(th) (Max) @ Id :

2V @ 1mA

ECCN Code :

EAR99

Turn-Off Delay Time :

60 ns

Resistance :

85mOhm

Gate to Source Voltage (Vgs) :

12V

Number of Terminations :

6

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

4A

Turn On Delay Time :

15 ns

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

4A

Number of Elements :

1

Pin Count :

6

Transistor Element Material :

SILICON

Fall Time (Typ) :

35 ns

Number of Pins :

6

FET Type :

P-Channel

Vgs (Max) :

±12V

Drain to Source Breakdown Voltage :

-20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

4A Ta