RTQ025P02TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

JESD-609 Code :

e1

Current Rating :

-2.5A

Mounting Type :

Surface Mount

Threshold Voltage :

-2V

Lead Free :

Lead Free

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Fall Time (Typ) :

20 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 1mA

Mount :

Surface Mount

Number of Pins :

6

Drain to Source Breakdown Voltage :

-20V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 10V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Terminal Form :

Gull wing

ECCN Code :

EAR99

Power Dissipation-Max :

1.25W Ta

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Vgs (Max) :

±12V

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

1

Turn On Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

12V

Turn-Off Delay Time :

40 ns

Number of Terminations :

6

Power Dissipation :

1.25W

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

2.5A

Published :

2003

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.5A, 4.5V

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

10

Voltage - Rated DC :

-20V

Rise Time :

20ns

Drain-source On Resistance-Max :

0.11Ohm

Radiation Hardening :

No

Transistor Element Material :

SILICON