RTQ020N05TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

2A

Rds On (Max) @ Id, Vgs :

190m Ω @ 2A, 4.5V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Published :

2012

FET Type :

N-Channel

Vgs (Max) :

±12V

Power Dissipation-Max :

600mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

10

Pin Count :

6

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Surface Mount :

yes

Factory Lead Time :

20 Weeks

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

45V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.28Ohm

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Form :

Gull wing

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G6

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

DS Breakdown Voltage-Min :

45V

JESD-609 Code :

e1

Operating Temperature :

150°C TJ

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

8A

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260