RSM002P03T2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

TIN COPPER

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 200mA, 10V

Power Dissipation-Max :

150mW Ta

Fall Time (Typ) :

5 ns

Turn On Delay Time :

8 ns

Voltage - Rated DC :

-30V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-723

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-30V

Power Dissipation :

150mW

Continuous Drain Current (ID) :

200mA

Rise Time :

5ns

Turn-Off Delay Time :

30 ns

Mount :

Surface Mount

Resistance :

2.4Ohm

Published :

2007

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Pbfree Code :

yes

FET Type :

P-Channel

REACH SVHC :

No SVHC

Pin Count :

3

JESD-609 Code :

e2

Number of Pins :

3

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

3

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

0.2A

Radiation Hardening :

No

Current Rating :

-200mA

Number of Elements :

1

Terminal Form :

Flat

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

30pF @ 10V

Factory Lead Time :

16 Weeks

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

200mA Ta