RSJ250P10TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

25A Ta

Published :

2011

Drain to Source Breakdown Voltage :

-100V

Turn On Delay Time :

30 ns

Number of Terminations :

2

Transistor Application :

SWITCHING

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

8000pF @ 25V

Fall Time (Typ) :

180 ns

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

310 ns

Rds On (Max) @ Id, Vgs :

63m Ω @ 25A, 10V

Pin Count :

3

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

25A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Number of Pins :

83

ECCN Code :

EAR99

Terminal Position :

Single

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Rise Time :

67ns

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Factory Lead Time :

20 Weeks

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Drain to Source Voltage (Vdss) :

100V

Power Dissipation-Max :

50W Tc

Drain-source On Resistance-Max :

0.063Ohm

Number of Channels :

1

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

50A

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount