RSF010P03TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Radiation Hardening :

No

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

800mW

Pin Count :

3

Drain to Source Breakdown Voltage :

-30V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

Turn On Delay Time :

8 ns

JESD-609 Code :

e2

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Terminal Finish :

TIN COPPER

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rds On (Max) @ Id, Vgs :

350m Ω @ 1A, 10V

REACH SVHC :

No SVHC

Mount :

Surface Mount

Number of Elements :

1

Resistance :

630mOhm

Gate Charge (Qg) (Max) @ Vgs :

1.9nC @ 5V

Number of Terminations :

3

Lead Free :

Lead Free

Vgs (Max) :

±20V

Pbfree Code :

yes

Nominal Vgs :

-2.5 V

Power Dissipation-Max :

800mW Ta

Fall Time (Typ) :

11 ns

Published :

2007

Continuous Drain Current (ID) :

1A

Current - Continuous Drain (Id) @ 25°C :

1A Ta

FET Type :

P-Channel

Dual Supply Voltage :

-30V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

1A

Terminal Position :

Dual

Rise Time :

11ns

Number of Pins :

3

Package / Case :

3-SMD, Flat Lead

Turn-Off Delay Time :

20 ns

Threshold Voltage :

-2.5V

Termination :

SMD/SMT

Element Configuration :

Single