RS1G201ATTB1

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Mfr.Part #
RS1G201ATTB1
Manufacturer
ROHM Semiconductor
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET P-CH 40V 20A/78A 8HSOP
Stock
22,297
In Stock :
22,297

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Maximum Operating Temperature :
+ 150 C
Number of Elements per Chip :
1
Base Product Number :
RS1G
Mounting :
Surface Mount
Transistor Polarity :
P-Channel
Continuous Drain Current Id :
78
Number of Elements :
1
Number of Channels :
1 Channel
Product Status :
Active
Current - Continuous Drain (Id) @ 25°C :
20A (Ta), 78A (Tc)
Power Dissipation (Max) :
3W (Ta), 40W (Tc)
Operating Temperature Classification :
Military
Mounting Type :
Surface Mount
Package Type :
HSOP EP
Gate-Source Voltage (Max) :
±20(V)
Gate Charge (Qg) (Max) @ Vgs :
130 nC @ 10 V
Series :
-
Continuous Drain Current :
20(A)
Technology :
MOSFET (Metal Oxide)
Rad Hardened :
No
Supplier Device Package :
8-HSOP
Pin Count :
8
MSL :
-
FET Feature :
-
Drain to Source Voltage (Vdss) :
40 V
Input Capacitance (Ciss) (Max) @ Vds :
6890 pF @ 20 V
Qualification :
-
Operating Temp Range :
-55C to 150C
Power Dissipation :
40
Channel Type :
P Channel
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Rds On (Max) @ Id, Vgs :
5.2mOhm @ 20A, 10V
Channel Mode :
Enhancement
Mounting Style :
SMD/SMT
Polarity :
P
Drain-Source On-Volt :
40(V)
Minimum Operating Temperature :
-
FET Type :
P-Channel
Vgs (Max) :
±20V
Operating Temperature :
-55°C ~ 150°C (TJ)
Type :
Power MOSFET
Package / Case :
8-PowerTDFN
Datasheets
RS1G201ATTB1
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor RS1G201ATTB1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 150°C (TJ), Type:Power MOSFET, Package / Case:8-PowerTDFN, RS1G201ATTB1 pinout, RS1G201ATTB1 datasheet PDF, RS1G201ATTB1 amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor RS1G201ATTB1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor RS1G201ATTB1


MOSFET (Metal Oxide) P-Channel 5.2mOhm @ 20A, 10V ±20V 6890 pF @ 20 V 130 nC @ 10 V 40 V 8-PowerTDFN

RS1G201ATTB1 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6890 pF @ 20 V.This transistor requires a drain-source voltage (Vdss) of 40 V.

RS1G201ATTB1 Features


a 40 V drain to source voltage (Vdss)


RS1G201ATTB1 Applications


There are a lot of ROHM Semiconductor
RS1G201ATTB1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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