RRR030P03TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

1.6mm

Fall Time (Typ) :

35 ns

Published :

2009

Rise Time :

18ns

Height :

900μm

Length :

2.9mm

Rds On (Max) @ Id, Vgs :

75m Ω @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Terminal Position :

Dual

Pbfree Code :

yes

Mount :

Surface Mount

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Power Dissipation-Max :

1W Ta

Turn On Delay Time :

7 ns

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Number of Elements :

1

Power Dissipation :

1W

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

3A

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

Drain to Source Breakdown Voltage :

-30V

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.075Ohm

JESD-609 Code :

e1

Number of Terminations :

3

Package / Case :

SC-96

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

Terminal Form :

Gull wing

Turn-Off Delay Time :

50 ns

Element Configuration :

Single

Pin Count :

3

Number of Pins :

3

Operating Temperature :

150°C TJ

FET Type :

P-Channel

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

3A

Factory Lead Time :

20 Weeks