RRQ030P03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

600mW Ta

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Number of Terminations :

6

Pin Count :

6

Turn-Off Delay Time :

50 ns

Lead Free :

Lead Free

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 10V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

FET Type :

P-Channel

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Fall Time (Typ) :

35 ns

Rise Time :

18ns

Time@Peak Reflow Temperature-Max (s) :

10

Pbfree Code :

yes

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e1

Drain Current-Max (Abs) (ID) :

3A

Operating Temperature :

150°C TJ

Drain-source On Resistance-Max :

0.075Ohm

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Continuous Drain Current (ID) :

3A

Element Configuration :

Single

Number of Channels :

1

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

7 ns

Terminal Position :

Dual

Vgs (Max) :

±20V

Radiation Hardening :

No

ECCN Code :

EAR99

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-30V

Rds On (Max) @ Id, Vgs :

75m Ω @ 3A, 10V