RRL035P03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

50m Ω @ 3.5A, 10V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Vgs (Max) :

±20V

Turn On Delay Time :

7 ns

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.05Ohm

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

Tin/Copper (Sn/Cu)

Operating Mode :

ENHANCEMENT MODE

Published :

2012

Radiation Hardening :

No

Number of Terminations :

6

Fall Time (Typ) :

40 ns

Power Dissipation-Max :

320mW Ta

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

20 Weeks

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 5V

Continuous Drain Current (ID) :

3.5A

DS Breakdown Voltage-Min :

30V

Number of Elements :

1

Pbfree Code :

yes

Rise Time :

9ns

Terminal Position :

Dual

Pin Count :

6

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

75 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 10V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e2

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Pins :

6

Drain to Source Voltage (Vdss) :

30V

Package / Case :

6-SMD, Flat Leads

Mounting Type :

Surface Mount