RQ7E055ATTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

Drain-source On Resistance-Max :

0.0361Ohm

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

24.5m Ω @ 5.5A, 10V

Surface Mount :

yes

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

1.5W Tc

Gate Charge (Qg) (Max) @ Vgs :

18.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 15V

Number of Elements :

1

JESD-30 Code :

R-PDSO-F8

Packaging :

Cut Tape (CT)

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

22 mJ

Factory Lead Time :

20 Weeks

Vgs (Max) :

±20V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-SMD, Flat Lead

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

5.5A

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

30V

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

22A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V