RQ1E070RPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Copper (Sn/Cu)

Pin Count :

8

Turn-Off Delay Time :

140 ns

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 5V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 10V

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-SMD, Flat Lead

Drain to Source Voltage (Vdss) :

30V

Drain to Source Breakdown Voltage :

-30V

Drain Current-Max (Abs) (ID) :

7A

Fall Time (Typ) :

70 ns

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Mount :

Surface Mount

Vgs (Max) :

±20V

Lead Free :

Lead Free

Terminal Position :

Dual

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Number of Channels :

1

ECCN Code :

EAR99

Continuous Drain Current (ID) :

7A

Power Dissipation-Max :

550mW Ta

Pbfree Code :

yes

Turn On Delay Time :

16 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

FET Type :

P-Channel

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Rise Time :

35ns

Rds On (Max) @ Id, Vgs :

17m Ω @ 7A, 10V

JESD-609 Code :

e2

Factory Lead Time :

20 Weeks