RP1E090RPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 10V

Number of Pins :

6

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 5V

JESD-609 Code :

e2

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Published :

2010

Power Dissipation-Max :

2W Ta

Power Dissipation :

2W

Terminal Finish :

TIN COPPER

Mount :

Surface Mount

FET Type :

P-Channel

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

9A

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

-30V

Mounting Type :

Surface Mount

Number of Elements :

1

Continuous Drain Current (ID) :

9A

Package / Case :

6-SMD, Flat Leads

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Pin Count :

6

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

16.9m Ω @ 9A, 10V

Number of Terminations :

6

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Drain-source On Resistance-Max :

0.0294Ohm