RMW280N03TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Pulsed Drain Current-Max (IDM) :

112A

Lead Free :

Lead Free

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

28A

Rise Time :

81ns

Power Dissipation-Max :

3W Ta

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Fall Time (Typ) :

50 ns

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

28A Ta

Power Dissipation :

3W

Number of Terminations :

8

Terminal Position :

Dual

Turn On Delay Time :

24 ns

Mount :

Surface Mount

Mounting Type :

Surface Mount

Turn-Off Delay Time :

94 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

3130pF @ 15V

Published :

2011

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

10

FET Type :

N-Channel

Package / Case :

8-SMD, Flat Lead

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 28A, 10V