RM4N650TI

Manufacturer :

Rectron USA

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Power Dissipation (Max) :

28.5W (Tc)

Minimum Operating Temperature :

- 55 C

Transistor Type :

1 N-Channel

Capacitance :

Input Capacitance (Ciss) - 280pF

FET Feature :

-

Vgs (Max) :

±30V

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 2.5A, 10V

Packaging :

Case - TO-220F

Number of Channels :

1 Channel

Maximum Operating Temperature :

+ 150 C

Mounting Type :

Through Hole

Transistor Polarity :

N-Channel

Supplier Device Package :

TO-220F

Drive Voltage (Max Rds On, Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

280 pF @ 50 V

FET Type :

N-Channel

Configuration :

Single

RoHS :

Y

Brand :

Rectron

Package :

Tube

Rise Time :

3 ns

Drain to Source Voltage (Vdss) :

650 V

Voltage :

Vdss - 650V

Manufacturer :

Rectron

Series :

-

Product Type :

MOSFET

Mounting Style :

Through Hole

Product Status :

Active

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

Channel Mode :

Enhancement

Subcategory :

MOSFETs