RM4N650TI

Manufacturer :

Rectron USA

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Power Dissipation (Max) :

28.5W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Transistor Polarity :

N-Channel

Voltage :

Vdss - 650V

Product Type :

MOSFET

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±30V

FET Feature :

-

Product Status :

Active

Transistor Type :

1 N-Channel

Subcategory :

MOSFETs

Input Capacitance (Ciss) (Max) @ Vds :

280 pF @ 50 V

Number of Channels :

1 Channel

Capacitance :

Input Capacitance (Ciss) - 280pF

Product Category :

MOSFET

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Packaging :

Case - TO-220F

Channel Mode :

Enhancement

Mounting Type :

Through Hole

RoHS :

Y

Rise Time :

3 ns

Package :

Tube

Configuration :

Single

Supplier Device Package :

TO-220F

Maximum Operating Temperature :

+ 150 C

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 2.5A, 10V

Drain to Source Voltage (Vdss) :

650 V

Series :

-

Manufacturer :

Rectron

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

Mounting Style :

Through Hole

Brand :

Rectron

Operating Temperature :

-55°C ~ 150°C (TJ)