RM4N650IP

Manufacturer :

Rectron USA

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

-

Mounting Type :

Through Hole

Configuration :

Single

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

280 pF @ 50 V

Package / Case :

TO-251-3 Stub Leads, IPak

Subcategory :

MOSFETs

Minimum Operating Temperature :

- 55 C

Rise Time :

3 ns

Capacitance :

Input Capacitance (Ciss) - 280pF

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Supplier Device Package :

TO-251

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Product Type :

MOSFET

Product Category :

MOSFET

Voltage :

Vdss - 650V

Transistor Polarity :

N-Channel

Product Status :

Active

Packaging :

Case - TO-251

Power Dissipation (Max) :

46W (Tc)

Number of Channels :

1 Channel

Channel Mode :

Enhancement

Mounting Style :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 2.5A, 10V

Vgs (Max) :

±30V

Brand :

Rectron

RoHS :

Y

Operating Temperature :

-55°C ~ 150°C (TJ)

Manufacturer :

Rectron

Drain to Source Voltage (Vdss) :

650 V

Transistor Type :

1 N-Channel