RM12N650LD
- Mfr.Part #
- RM12N650LD
- Manufacturer
- Rectron USA
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 11.5A TO252-2
- Stock
- 16,054
- In Stock :
- 16,054
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- Manufacturer :
- Rectron USA
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 650 V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Feature :
- -
- Voltage :
- Vdss - 650V
- RoHS :
- Y
- Series :
- -
- Packaging :
- Case - TO-252
- Vgs (Max) :
- ±30V
- Power Dissipation (Max) :
- 101W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A (Tc)
- Mounting Type :
- Surface Mount
- Manufacturer :
- Rectron
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 870 pF @ 50 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Supplier Device Package :
- TO-252-2
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs :
- 360mOhm @ 7A, 10V
- Product Status :
- Active
- FET Type :
- N-Channel
- Capacitance :
- Input Capacitance (Ciss) - 1285pF
- Datasheets
- RM12N650LD

N-Channel Case - TO-252 360mOhm @ 7A, 10V ±30V 870 pF @ 50 V 650 V TO-252-3, DPak (2 Leads + Tab), SC-63
RM12N650LD Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 870 pF @ 50 V.The transistor must receive a 650 V drain to source voltage (Vdss) in order to function.
RM12N650LD Features
a 650 V drain to source voltage (Vdss)
RM12N650LD Applications
There are a lot of Rectron USA
RM12N650LD applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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