RM12N650IP

Manufacturer :

Rectron USA

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

101W (Tc)

Voltage :

Vdss - 650V

Operating Temperature :

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss) :

650 V

Product Status :

Active

Mounting Type :

Through Hole

Package :

Tube

Drive Voltage (Max Rds On, Min Rds On) :

10V

Series :

-

RoHS :

Y

FET Type :

N-Channel

Package / Case :

TO-251-3 Stub Leads, IPak

Manufacturer :

Rectron

Current - Continuous Drain (Id) @ 25°C :

11.5A (Tc)

Vgs(th) (Max) @ Id :

4V @ 250µA

Capacitance :

Input Capacitance (Ciss) - 1285pF

Rds On (Max) @ Id, Vgs :

360mOhm @ 7A, 10V

Supplier Device Package :

TO-251

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

870 pF @ 50 V

FET Feature :

-

Packaging :

Case - TO-251