RM11N800T2

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Mfr.Part #
RM11N800T2
Manufacturer
Rectron USA
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 800V 11A TO220-3
Stock
2,077
In Stock :
2,077

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Manufacturer :
Rectron USA
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Tube
Vgs(th) (Max) @ Id :
4V @ 250µA
Brand :
Rectron
Series :
-
Rise Time :
7 ns
Product Type :
MOSFET
Voltage :
Vdss - 800V
Supplier Device Package :
TO-220-3
Maximum Operating Temperature :
+ 150 C
Product Status :
Active
Minimum Operating Temperature :
- 55 C
Input Capacitance (Ciss) (Max) @ Vds :
2600 pF @ 50 V
Package / Case :
TO-220-3
Subcategory :
MOSFETs
Drain to Source Voltage (Vdss) :
800 V
Transistor Type :
1 N-Channel
Mounting Type :
Through Hole
FET Feature :
-
Transistor Polarity :
N-Channel
Configuration :
Single
Channel Mode :
Enhancement
Operating Temperature :
-55°C ~ 150°C (TJ)
Number of Channels :
1 Channel
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Product Category :
MOSFET
Manufacturer :
Rectron
FET Type :
N-Channel
Capacitance :
Input Capacitance (Ciss) - 2600pF
Packaging :
Case - TO-220
Rds On (Max) @ Id, Vgs :
420mOhm @ 5.5A, 10V
Vgs (Max) :
±30V
Power Dissipation (Max) :
188W (Tc)
Mounting Style :
Through Hole
RoHS :
Y
Datasheets
RM11N800T2
Introducing Transistors - FETs, MOSFETs - Single Rectron USA RM11N800T2 from Chip IC,where excellence meets affordability. This product stands out with its Voltage:Vdss - 800V, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C ~ 150°C (TJ), Number of Channels:1 Channel, RM11N800T2 pinout, RM11N800T2 datasheet PDF, RM11N800T2 amp .Beyond Transistors - FETs, MOSFETs - Single Rectron USA RM11N800T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Rectron USA RM11N800T2


N-Channel Case - TO-220 420mOhm @ 5.5A, 10V ±30V 2600 pF @ 50 V 800 V TO-220-3

RM11N800T2 Overview


A device's maximum input capacitance is 2600 pF @ 50 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 800 V drain to source voltage (Vdss).

RM11N800T2 Features


a 800 V drain to source voltage (Vdss)


RM11N800T2 Applications


There are a lot of Rectron USA
RM11N800T2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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