RM11N800T2

Manufacturer :

Rectron USA

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

Product Type :

MOSFET

RoHS :

Y

Transistor Polarity :

N-Channel

Capacitance :

Input Capacitance (Ciss) - 2600pF

Voltage :

Vdss - 800V

Supplier Device Package :

TO-220-3

Mounting Style :

Through Hole

Subcategory :

MOSFETs

Channel Mode :

Enhancement

Vgs (Max) :

±30V

Transistor Type :

1 N-Channel

Series :

-

Configuration :

Single

Drain to Source Voltage (Vdss) :

800 V

Packaging :

Case - TO-220

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

2600 pF @ 50 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Manufacturer :

Rectron

Number of Channels :

1 Channel

Rise Time :

7 ns

Brand :

Rectron

Product Status :

Active

FET Feature :

-

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package :

Tube

FET Type :

N-Channel

Power Dissipation (Max) :

188W (Tc)

Product Category :

MOSFET

Maximum Operating Temperature :

+ 150 C

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

420mOhm @ 5.5A, 10V

Package / Case :

TO-220-3