RF4L070BGTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Rise Time :

5.7 ns

FET Type :

N-Channel

Manufacturer :

Rohm Semiconductor

Number of Channels :

1 Channel

Package Type :

HUML2020L8

Continuous Drain Current Id :

7A

Gate Charge (Qg) (Max) @ Vgs :

7.6 nC @ 10 V

Packaging :

Cut Tape

Channel Type :

N

Current - Continuous Drain (Id) @ 25°C :

7A (Ta)

Package :

Digi-Reel?

Product Type :

MOSFET

Product Status :

Active

Power Dissipation :

2W

Drain to Source Voltage (Vdss) :

60 V

Transistor Polarity :

N-Channel

FET Feature :

-

Supplier Device Package :

DFN2020-8S

Configuration :

Single

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 55 C

Series :

-

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

460 pF @ 30 V

Operating Temperature :

150°C (TJ)

Rds On (Max) @ Id, Vgs :

27mOhm @ 7A, 10V

Mounting Type :

Surface Mount

Mounting Style :

SMD/SMT

Brand :

Rohm Semiconductor

RoHS :

Details

Subcategory :

MOSFETs

Power Dissipation (Max) :

2W (Ta)

Vgs (Max) :

±20V

Package / Case :

8-PowerUDFN

Qualification :

-

Maximum Operating Temperature :

+ 150 C