RF4E080GNTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Continuous Drain Current (ID) :

8A

Factory Lead Time :

20 Weeks

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Element Configuration :

Single

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Power Dissipation-Max :

2W Ta

JESD-30 Code :

S-PDSO-N6

Published :

2015

Rds On (Max) @ Id, Vgs :

17.6m Ω @ 8A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Fall Time (Typ) :

2.4 ns

Rise Time :

3.6ns

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 15V

Number of Channels :

1

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Terminal Form :

NO LEAD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

5.8nC @ 10V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

32A

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

8A

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

8-PowerUDFN

Turn-Off Delay Time :

17.3 ns

Number of Pins :

8

Turn On Delay Time :

6.9 ns

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ