RF4E070BNTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

S-PDSO-N6

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

6 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Case Connection :

DRAIN

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Vgs (Max) :

±20V

Package / Case :

8-PowerUDFN

ECCN Code :

EAR99

Element Configuration :

Single

Fall Time (Typ) :

5 ns

Time@Peak Reflow Temperature-Max (s) :

10

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Factory Lead Time :

10 Weeks

Drain-source On Resistance-Max :

0.04Ohm

Rise Time :

8ns

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Gate Charge (Qg) (Max) @ Vgs :

8.9nC @ 10V

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

7A

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Published :

2013

Rds On (Max) @ Id, Vgs :

28.6m Ω @ 7A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Transistor Application :

SWITCHING

Turn-Off Delay Time :

23 ns

Number of Pins :

8

Terminal Position :

Dual

Continuous Drain Current (ID) :

7A

Terminal Form :

NO LEAD

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 15V

FET Type :

N-Channel

Power Dissipation-Max :

2W Ta