RF4E075ATTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

30A

FET Type :

P-Channel

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.0317Ohm

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

8

Packaging :

Cut Tape (CT)

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

21.7m Ω @ 7.5A, 10V

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 15V

JESD-30 Code :

S-PDSO-N6

Number of Terminations :

6

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Package / Case :

8-PowerUDFN

Mount :

Surface Mount

ECCN Code :

EAR99

Factory Lead Time :

10 Weeks

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Power Dissipation-Max :

2W Ta

Avalanche Energy Rating (Eas) :

10.6 mJ

Published :

2015

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

7.5A

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

NO LEAD