RF1S9540

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.2Ohm

Power Dissipation-Max (Abs) :

150W

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

76A

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Terminal Finish :

Tin/Lead (Sn/Pb)

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

P-Channel

Terminal Position :

Single

DS Breakdown Voltage-Min :

100V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-262AA

Surface Mount :

No

Transistor Application :

SWITCHING

Number of Terminals :

3

Transistor Element Material :

SILICON

Operating Temperature (Max) :

175°C

JESD-609 Code :

e0

Avalanche Energy Rating (Eas) :

960 mJ

Drain Current-Max (Abs) (ID) :

19A

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE