RF1S640

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.18ohm

Polarity/Channel Type :

N-Channel

Number of Terminals :

3

Number of Elements :

1

DS Breakdown Voltage-Min :

200V

Power Dissipation-Max (Abs) :

125W

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-30 Code :

R-PSIP-T3

JESD-609 Code :

e0

Surface Mount :

No

Terminal Form :

THROUGH-HOLE

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

72A

Operating Temperature (Max) :

150°C

JEDEC-95 Code :

TO-262AA

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

580 mJ

Case Connection :

DRAIN

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

18A