RF1S540SM

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Number of Terminals :

2

RoHS Status :

Non-RoHS Compliant

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

110A

Terminal Finish :

Tin/Lead (Sn/Pb)

Power Dissipation-Max (Abs) :

150W

Terminal Position :

Single

Operating Temperature (Max) :

150°C

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

230 mJ

JEDEC-95 Code :

TO-263AB

DS Breakdown Voltage-Min :

100V

Drain Current-Max (Abs) (ID) :

28A

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.077Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e0

Number of Elements :

1