RF1S540

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Terminal Form :

THROUGH-HOLE

Drain-source On Resistance-Max :

0.077Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

150W

JESD-30 Code :

R-PSIP-T3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e0

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

230 mJ

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

28A

ECCN Code :

EAR99

Operating Temperature (Max) :

150°C

JEDEC-95 Code :

TO-262AA

Number of Terminals :

3

Number of Elements :

1

DS Breakdown Voltage-Min :

100V

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

110A