RE1J002YNTCL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

200mA

Transistor Application :

SWITCHING

Element Configuration :

Single

Vgs(th) (Max) @ Id :

800mV @ 1mA

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

Turn On Delay Time :

5 ns

Terminal Position :

Dual

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Fall Time (Typ) :

43 ns

Drain-source On Resistance-Max :

2.8Ohm

Drive Voltage (Max Rds On,Min Rds On) :

0.9V 4.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Power Dissipation-Max :

150mW Ta

Rise Time :

8ns

Factory Lead Time :

16 Weeks

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

50V

Lead Free :

Lead Free

Number of Elements :

1

Turn-Off Delay Time :

17 ns

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

26pF @ 10V

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 200mA, 4.5V

Package / Case :

SC-89, SOT-490

Number of Pins :

3

Weight :

29.993795mg

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Vgs (Max) :

±8V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Published :

2012

Drain Current-Max (Abs) (ID) :

0.2A

Mount :

Surface Mount

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED