RD3H080SPTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

91m Ω @ 8A, 10V

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

45V

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

P-Channel

DS Breakdown Voltage-Min :

45V

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.147Ohm

Vgs(th) (Max) @ Id :

3V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Drain Current-Max (Abs) (ID) :

8A

Operating Temperature :

150°C TJ

Power Dissipation-Max :

15W Tc

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 5V

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Terminal Position :

Single

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

16A