RD3G07BATTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

P-Channel

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Series :

-

Subcategory :

MOSFETs

FET Type :

P-Channel

Continuous Drain Current Id :

70

Rds On (Max) @ Id, Vgs :

7.1mOhm @ 70A, 10V

Gate Charge (Qg) (Max) @ Vgs :

105 nC @ 10 V

Manufacturer :

Rohm Semiconductor

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

5550 pF @ 20 V

Operating Temperature :

150°C (TJ)

Product Status :

Active

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Qualification :

-

Drain to Source Voltage (Vdss) :

40 V

Maximum Operating Temperature :

+ 150 C

Package Type :

DPAK (TO-252)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Configuration :

Single

Channel Type :

P

Mounting Type :

Surface Mount

FET Feature :

-

Power Dissipation :

101

Power Dissipation (Max) :

101W (Ta)

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

70A (Ta)

Transistor Type :

1 P - Channel

Brand :

Rohm Semiconductor

Rise Time :

90 ns

Packaging :

Cut Tape

Product Type :

MOSFET

Supplier Device Package :

TO-252

Package :

Digi-Reel?

Number of Elements per Chip :

1

Mounting Style :

SMD/SMT

RoHS :

Details

Channel Mode :

Enhancement