RCX120N25

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

250V

Turn-Off Delay Time :

45 ns

Published :

2013

Number of Pins :

3

Case Connection :

Isolated

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

180mOhm

Power Dissipation :

40W

Turn On Delay Time :

33 ns

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

Continuous Drain Current (ID) :

12A

Rise Time :

65ns

ECCN Code :

EAR99

Pin Count :

3

Transistor Application :

SWITCHING

Mount :

Through Hole

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Factory Lead Time :

16 Weeks

Package / Case :

TO-220-3 Full Pack

Avalanche Energy Rating (Eas) :

10.5 mJ

Operating Temperature :

150°C TJ

Number of Elements :

1

Transistor Element Material :

SILICON

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

48A

Fall Time (Typ) :

20 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Mounting Type :

Through Hole

Power Dissipation-Max :

2.23W Ta 40W Tc

Packaging :

Bulk