RCJ331N25TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Vgs (Max) :

±30V

Package Type :

TO-263S

Qualification :

-

Channel Type :

N Channel

Power Dissipation (Max) :

1.56W (Ta), 211W (Tc)

Current - Continuous Drain (Id) @ 25°C :

33A (Tc)

Rds On (Max) @ Id, Vgs :

105mOhm @ 16.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4500 pF @ 25 V

Maximum Operating Temperature :

+ 150 C

Number of Channels :

1 Channel

Mounting Type :

Surface Mount

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Style :

SMD/SMT

Product Status :

Active

Drive Voltage (Max Rds On, Min Rds On) :

10V

Power Dissipation :

211W

Operating Temperature :

150°C (TJ)

Supplier Device Package :

TO-263S

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

5V @ 1mA

Number of Elements per Chip :

1

FET Feature :

-

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

80 nC @ 10 V

Drain to Source Voltage (Vdss) :

250 V

Channel Mode :

Enhancement

Continuous Drain Current Id :

33A