RAL045P01TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

150 ns

Factory Lead Time :

20 Weeks

Drain to Source Breakdown Voltage :

-12V

ECCN Code :

EAR99

Number of Pins :

6

Drain-source On Resistance-Max :

0.03Ohm

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

-8V

Number of Terminations :

6

Published :

2011

Number of Channels :

1

Lead Free :

Lead Free

Pin Count :

6

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Turn On Delay Time :

16 ns

Rds On (Max) @ Id, Vgs :

30m Ω @ 4.5A, 4.5V

Rise Time :

60ns

Vgs(th) (Max) @ Id :

1V @ 1mA

Transistor Element Material :

SILICON

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

12V

Power Dissipation-Max :

1W Ta

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

400 ns

Continuous Drain Current (ID) :

4.5A

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 6V

Mount :

Surface Mount

Package / Case :

6-SMD, Flat Leads

Height :

770μm

Width :

1.7mm

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Terminal Position :

Dual

Operating Temperature :

150°C TJ

Element Configuration :

Single

Radiation Hardening :

No

Length :

2mm

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1