R6520ENZ4C13

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Maximum Operating Temperature :

+ 150 C

FET Feature :

-

Drain to Source Voltage (Vdss) :

650 V

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

4V @ 630μA

Power Dissipation :

231W

Package :

Tube

Number of Channels :

1 Channel

Continuous Drain Current Id :

20A

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

231W (Tc)

Product Status :

Active

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Supplier Device Package :

TO-247G

Rds On (Max) @ Id, Vgs :

205mOhm @ 9.5A, 10V

Package / Case :

TO-247-3

Drive Voltage (Max Rds On, Min Rds On) :

10V

Series :

-

Input Capacitance (Ciss) (Max) @ Vds :

1400 pF @ 25 V

Channel Mode :

Enhancement

MSL :

MSL 1 - Unlimited

Current - Continuous Drain (Id) @ 25°C :

20A (Tc)

Operating Temperature :

150°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

61 nC @ 10 V

Channel Type :

N Channel

Mounting Style :

Through Hole

FET Type :

N-Channel

Qualification :

-