R6507END3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

650 V

Continuous Drain Current Id :

7A

FET Type :

N-Channel

Configuration :

Single

Packaging :

Cut Tape

Maximum Operating Temperature :

+ 150 C

Series :

-

Rds On (Max) @ Id, Vgs :

665mOhm @ 2.4A, 10V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Number of Channels :

1 Channel

Product Type :

MOSFET

Vgs (Max) :

±20V

Power Dissipation :

78W

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Product Status :

Active

Number of Elements per Chip :

1

RoHS :

Details

Package :

Digi-Reel?

Transistor Polarity :

N-Channel

Package Type :

DPAK (TO-252)

Input Capacitance (Ciss) (Max) @ Vds :

390 pF @ 25 V

FET Feature :

-

Operating Temperature :

150°C (TJ)

Qualification :

-

Pin Count :

3

Product Category :

MOSFET

Power Dissipation (Max) :

78W (Tc)

Mounting Type :

Surface Mount

Channel Mode :

Enhancement

Supplier Device Package :

TO-252

Subcategory :

MOSFETs

Rise Time :

25 ns

Brand :

Rohm Semiconductor

Mounting Style :

SMD/SMT

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer :

Rohm Semiconductor

Vgs(th) (Max) @ Id :

4V @ 200μA

Current - Continuous Drain (Id) @ 25°C :

7A (Tc)

Channel Type :

N Channel