R6020ANX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Input Capacitance (Ciss) (Max) @ Vds :

2040pF @ 25V

Drain-source On Resistance-Max :

0.22Ohm

Mounting Type :

Through Hole

Fall Time (Typ) :

70 ns

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Mount :

Through Hole

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Power Dissipation :

50W

Vgs (Max) :

±30V

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

26.7 mJ

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Pin Count :

3

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Published :

2012

Number of Elements :

1

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

10

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

60ns

Factory Lead Time :

13 Weeks

Packaging :

Bulk

Rds On (Max) @ Id, Vgs :

220m Ω @ 10A, 10V

Turn-Off Delay Time :

230 ns

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

80A

Additional Feature :

FAST SWITCHING

Drain to Source Breakdown Voltage :

600V

Turn On Delay Time :

40 ns

Continuous Drain Current (ID) :

20A

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

50W Tc

Transistor Application :

SWITCHING