R6000ENHTB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Supplier Device Package :

8-SOP

Power Dissipation :

2W

Input Capacitance (Ciss) (Max) @ Vds :

45 pF @ 25 V

Vgs(th) (Max) @ Id :

5V @ 1mA

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Qualification :

-

Configuration :

Single

Subcategory :

MOSFETs

Drain to Source Voltage (Vdss) :

600 V

Continuous Drain Current Id :

500mA

Gate Charge (Qg) (Max) @ Vgs :

4.3 nC @ 10 V

Mounting Style :

SMD/SMT

Package :

Digi-Reel?

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Number of Elements per Chip :

1

Channel Type :

N Channel

Channel Mode :

Enhancement

Package Type :

SOP

Vgs (Max) :

±20V

Power Dissipation (Max) :

2W (Ta)

Series :

-

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

500mA (Ta)

Mounting Type :

Surface Mount

Manufacturer :

Rohm Semiconductor

Brand :

Rohm Semiconductor

Rise Time :

27 ns

Number of Channels :

1 Channel

RoHS :

Details

Packaging :

Cut Tape

FET Type :

N-Channel

Operating Temperature :

150°C

Product Type :

MOSFET

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

8.8Ohm @ 200mA, 10V

Pin Count :

8

Transistor Polarity :

N-Channel

FET Feature :

-