R5019ANJTL
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- Mfr.Part #
- R5019ANJTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 19A LPTS
- Stock
- 80
- In Stock ：
- 80
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 100W Tc
- Pulsed Drain Current-Max (IDM) :
- 76A
- Number of Terminations :
- 2
- Rise Time :
- 115ns
- Mount :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation :
- 100W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 165 ns
- Continuous Drain Current (ID) :
- 19A
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.24Ohm
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Published :
- 2011
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time :
- 40 ns
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 24.3 mJ
- Number of Pins :
- 83
- Fall Time (Typ) :
- 100 ns
- Drain to Source Breakdown Voltage :
- 500V
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- Datasheets
- R5019ANJTL
N-Channel Tape & Reel (TR) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R5019ANJTL Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 24.3 mJ.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 19A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [165 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 76A.A turn-on delay time of 40 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.
R5019ANJTL Features
the avalanche energy rating (Eas) is 24.3 mJ
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 165 ns
based on its rated peak drain current 76A.
R5019ANJTL Applications
There are a lot of ROHM Semiconductor
R5019ANJTL applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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